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4v drive nch + pch mosfet QS8M51 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) low voltage drive (4v drive). 3) small surface mount package (tsmt8). ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 3000 QS8M51 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 100 ? 100 v gate-source voltage v gss ? 20 ? 20 v continuous i d ? 2 ? 1.5 a pulsed i dp ? 6 ? 6a continuous i s 1.0 ? 1.0 a pulsed i sp 6 ? 6a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. unit limits ? 55 to ? 150 symbol 1.25 150 power dissipation p d 1.5 type source current (body diode) drain current parameter (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode *1 *1 *2 tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) abbreviated symbol : m51 ?2 ?1 (8) (7) (1) (2) ?2 ?1 (6) (5) (3) (4) 1/10 2011.07 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
QS8M51 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 100 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =100v, v gs =0v gate threshold voltage v gs(th) 1 - 2.5 v v ds =10v, i d =1ma - 240 325 i d =2a, v gs =10v - 250 340 i d =2a, v gs =4.5v 260 355 i d =2a, v gs =4v forward transfer admittance l y fs l 1.9 - - s v ds =10v, i d =2a input capacitance c iss - 290 - pf v ds =25v output capacitance c oss - 30 - pf v gs =0v reverse transfer capacitance c rss - 20 - pf f=1mhz turn-on delay time t d(on) - 10 - ns v dd 50v, i d =1a rise time t r - 10 - ns v gs =10v turn-off delay time t d(off) - 30 - ns r l =50 ?? r g =10 ? fall time t f -15-ns total gate charge q g - 4.7 - nc v dd 50v, i d =2a gate-source charge q gs - 1.2 - nc v gs =5v gate-drain charge q gd - 1.8 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =2a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds(on) m ? * * * * * * * * * * 2/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M51 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss ? 100 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 100v, v gs =0v gate threshold voltage v gs(th) ? 1- ? 2.5 v v ds = ? 10v, i d = ? 1ma - 350 470 i d = ? 1.5a, v gs = ? 10v - 380 510 i d = ? 0.75a, v gs = ? 4.5v 400 540 i d = ? 0.75a, v gs = ? 4v forward transfer admittance l y fs l 1.5 - - s v ds = ? 10v, i d = ? 1.5a input capacitance c iss - 950 - pf v ds = ? 25v output capacitance c oss - 45 - pf v gs =0v reverse transfer capacitance c rss - 20 - pf f=1mhz turn-on delay time t d(on) - 10 - ns v dd ? 50v, i d = ? 0.75a rise time t r - 15 - ns v gs = ? 10v turn-off delay time t d(off) - 60 - ns r l =66 ?? r g =10 ? fall time t f -10-ns total gate charge q g - 17 - nc v dd ? 50v, i d = ? 1.5a gate-source charge q gs - 4.5 - nc v gs = ? 5v gate-drain charge q gd -5-nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 0.75a, v gs =0v *pulsed parameter conditions conditions m ? static drain-source on-state resistance r ds(on) parameter * * * * * * * * * * 3/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M51 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.0v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =2.5v t a =25 pulsed 0 0.5 1 1.5 2 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.8v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.5v v gs =2.0v t a =25 pulsed 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 pulsed 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 4/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M51 0.01 0.1 1 10 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : i s [a] source - drain voltage : v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0 100 200 300 400 500 600 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d =2.0a i d =1.0a t a =25 pulsed 1 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 50v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =50v i d =2a pulsed 5/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M51 1 10 100 1000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 f=1mhz v gs =0v c iss c oss c rss 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.14 normalized transient thermal resistance v.s. pulse width t a =25 single pulse 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =100 /w rth (ch - a) (t)=r(t) rth (ch - a) 0.01 0.1 1 10 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.15 maximum safe operating area t a =25 single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 6/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M51 tr.2(pch) 0 0.5 1 1.5 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v t a =25 pulsed 0 0.5 1 1.5 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 2.8v v gs = - 4.5v v gs = - 4.0v t a =25 pulsed 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 pulsed 10 100 1000 10000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 10 100 1000 10000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 10 100 1000 10000 0.01 0.1 1 10 static drain - source on - state resistance r ds (on) [m ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 4v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 7/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M51 0.01 0.1 1 10 0.001 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : - i d [a] fig.7 forward transfer admittance vs. drain current v ds = - 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.8 typical transfer characteristics v ds = - 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : - i s [a] source - drain voltage : - v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 100 200 300 400 500 600 700 800 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : - v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d = - 1.5a i d = - 0.75a t a =25 pulsed 1 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : - i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P - 50v v gs = - 10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 20 25 30 35 gate - source voltage : - v gs [v] total gate charge : - q g [nc] fig.12 dynamic input characteristics t a =25 c v dd = - 50v i d = - 1.5a pulsed 8/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M51 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : - v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.14 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =100 c /w rth (ch - a) (t)=r(t) rth (ch - a) 0.01 0.1 1 10 0.1 1 10 100 1000 drain current : - i d [ a ] drain - source voltage : - v ds [ v ] fig.15 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = - 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 9/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M51 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 10/10 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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